Pressure dependence of thermal contact resistance between copper heat sink and copper DBC surfaces in SiC power device packages
2014 (English)In: Silicon Carbide and Related Materials 2013, Trans Tech Publications Inc., 2014, 1118-1121 p.Conference paper (Refereed)
Thermal contact resistances have been measured in an experiment emulating heat transfer from a SiC die to a cooled heat sink through a heat spreader and a DBC structure. The major surface-dependent parameters are the surface roughness, surface hardness, and planarity. The measured thermal contact resistances are in agreement with theoretical values. When investigating DBC copper surfaces a second interface between the bonded Cu to AlN has to be taken into account.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. 1118-1121 p.
, Materials Science Forum, ISSN 0255-5476 ; 778-780
Cooling, DBC, Heat transfer, Packaging, Planarity, Pressure dependence, SiC, Surface parameter, Surface roughness, Thermal contact resistance
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-133317DOI: 10.4028/www.scientific.net/MSF.778-780.1118ISI: 000348066300257ScopusID: 2-s2.0-84896064403ISBN: 978-3-03835-010-1OAI: oai:DiVA.org:kth-133317DiVA: diva2:660510
15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013, Miyazaki, Japan, 29 September 2013 through 4 October 2013
QC 201502202013-10-302013-10-302015-02-20Bibliographically approved