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A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
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2013 (English)In: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, IEEE , 2013, 728-735 p.Conference paper, Published paper (Refereed)
Abstract [en]

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter.

Place, publisher, year, edition, pages
IEEE , 2013. 728-735 p.
Keyword [en]
Base Driver, Bipolar Junction Transistor, BJT, Discretized Base Driver, Driver, Proportional Base driver, Proportional Driver, SiC, Silicon Carbide
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-133285DOI: 10.1109/ECCE-Asia.2013.6579182ISI: 000332789100118Scopus ID: 2-s2.0-84883669615ISBN: 978-147990482-2 (print)OAI: oai:DiVA.org:kth-133285DiVA: diva2:661004
Conference
2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013; Melbourne, VIC; Australia; 3 June 2013 through 6 June 2013
Funder
StandUp
Note

QC 20131031

Available from: 2013-10-31 Created: 2013-10-29 Last updated: 2014-04-24Bibliographically approved

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Tolstoy, GeorgNee, Hans-Peter

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Tolstoy, GeorgPeftitsis, DimosthenisRabkowski, JacekNee, Hans-Peter
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