A study of low-frequency noise on high-k/metal gate stacks with in situ SiOx interfacial layer
2013 (English)In: 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, New York: IEEE conference proceedings, 2013, 1-4 p.Conference paper (Refereed)
Low-frequency noise of HfO2/TiN nMOSFETs with different SiO x interfacial layer (IL) thicknesses is presented. It is observed that chemically formed thin ILs (0.4 nm, 0.45 nm and 0.5 nm) show a noise level close to a reference thermal IL(1 nm). This is shown to relate to the dominant contribution of the high-k HfO2 traps in comparison to the IL traps. The average extracted values for effective trap densities in these wafers are Nt= 7×1018, 1×1019, 2×10 19 and 4.8×1019 for thermal oxide, 0.5 nm, 0.45 nm and 0.4 nm chemical oxide wafers respectively.
Place, publisher, year, edition, pages
New York: IEEE conference proceedings, 2013. 1-4 p.
Chemicaloxied, high-k dielectric, interfacial layer, Low-frequency noise, MOSFET
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-133365DOI: 10.1109/ICNF.2013.6578981ISI: 000332005700108ScopusID: 2-s2.0-84883677138ISBN: 978-147990668-0OAI: oai:DiVA.org:kth-133365DiVA: diva2:661651
2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, June 24-28 2013
FunderEU, European Research Council, 228229
QC 201311042013-11-042013-10-312015-11-30Bibliographically approved