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A study of low-frequency noise on high-k/metal gate stacks with in situ SiOx interfacial layer
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
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2013 (English)In: 2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, New York: IEEE conference proceedings, 2013, 1-4 p.Conference paper (Refereed)
Abstract [en]

Low-frequency noise of HfO2/TiN nMOSFETs with different SiO x interfacial layer (IL) thicknesses is presented. It is observed that chemically formed thin ILs (0.4 nm, 0.45 nm and 0.5 nm) show a noise level close to a reference thermal IL(1 nm). This is shown to relate to the dominant contribution of the high-k HfO2 traps in comparison to the IL traps. The average extracted values for effective trap densities in these wafers are Nt= 7×1018, 1×1019, 2×10 19 and 4.8×1019 for thermal oxide, 0.5 nm, 0.45 nm and 0.4 nm chemical oxide wafers respectively.

Place, publisher, year, edition, pages
New York: IEEE conference proceedings, 2013. 1-4 p.
Keyword [en]
Chemicaloxied, high-k dielectric, interfacial layer, Low-frequency noise, MOSFET
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-133365DOI: 10.1109/ICNF.2013.6578981ISI: 000332005700108ScopusID: 2-s2.0-84883677138ISBN: 978-147990668-0OAI: diva2:661651
2013 22nd International Conference on Noise and Fluctuations, ICNF 2013, Montpellier, France, June 24-28 2013
EU, European Research Council, 228229

QC 20131104

Available from: 2013-11-04 Created: 2013-10-31 Last updated: 2015-11-30Bibliographically approved
In thesis
1. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Open this publication in new window or tab >>Low-frequency noise in high-k gate stacks with interfacial layer engineering
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers  for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices.

High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xv, 60 p.
, TRITA-ICT, 2015:21
CMOS, high k, 1/ f noise, low-frequency noise, number fluctuations, mobility fluctuat ions, traps, interfacial layer, TmSiO, Tm 2O3
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
urn:nbn:se:kth:diva-177911 (URN)978-91-7595-751-7 (ISBN)
Public defence
2015-12-18, Sal/hall C, Elektrum, KTH-ICT, Kista, 10:00 (English)

QC 20151130

Available from: 2015-11-30 Created: 2015-11-30 Last updated: 2015-11-30Bibliographically approved

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