Dual-function gate driver for a power module with SiC junction field transistors
2013 (English)In: 2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013, IEEE , 2013, 245-250 p.Conference paper (Refereed)
Driving a high-power module which is populated with several parallel-connected silicon carbide junction field-effect transistor chips must be done appropriately. Parasitic elements may give rise to oscillations during turn-on and turn-off. Fast and oscillation-free switching performance is desired in order to achieve a high efficiency. The key-issue in order to fulfill these two requirements is the design of a sophisticated gate driver. This paper proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current and voltage suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 140 ns and 165 ns respectively can be reached, while the magnitude of the current oscillations is kept at an acceptable level. Moreover, using the proposed gate driver an efficiency of approximately 99.6% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.
Place, publisher, year, edition, pages
IEEE , 2013. 245-250 p.
Gate Driver, Junction Field Effect Transistor, Power Module, Silicone Carbide
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-133369DOI: 10.1109/ECCE-Asia.2013.6579104ISI: 000332789100040ScopusID: 2-s2.0-84883717322ISBN: 978-147990482-2OAI: oai:DiVA.org:kth-133369DiVA: diva2:661951
2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013; Melbourne, VIC; Australia; 3 June 2013 through 6 June 2013
QC 201311052013-11-052013-10-312016-09-16Bibliographically approved