Silicon Nanowires Integrated in a Fully Depleted CMOS Process for Charge Based Biosensing
2013 (English)In: ULIS 2013: The 14th International Conference on Ultimate Integration on Silicon, Incorporating the 'Technology Briefing Day', IEEE , 2013, 81-84 p.Conference paper (Refereed)
We describe a silicon nanowire (SiNW) biosensor fabricated in a fully depleted SOI CMOS process. The sensor array consists of 32 by 32 pixel matrix (1024 pixels or test sites) and 8 input-output (I/O) pins. In each pixel single crystalline SiNW with 60 by 20 nm cross-section area is defined using sidewall transfer lithography (STL) in the SOI layer. The key advantage of the design is that 1024 individual SiNWs can be read-out sequentially and used for real-time charge based detection of molecules in liquids or gases.
Place, publisher, year, edition, pages
IEEE , 2013. 81-84 p.
, International Conference on Ultimate Integration on Silicon, ISSN 2330-5738
nanowire, biosensing, SOI, CMOS, STL
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-133498DOI: 10.1109/ULIS.2013.6523496ISI: 000325214300020ScopusID: 2-s2.0-84880273605ISBN: 978-1-4673-4802-7OAI: oai:DiVA.org:kth-133498DiVA: diva2:662082
14th International Conference on Ultimate Integration on Silicon (ULIS), MAR 19-21, 2013, Coventry, England
QC 201311062013-11-062013-11-062013-11-06Bibliographically approved