Resistive switching in iron-oxide-filled carbon nanotubes
2014 (English)In: Nanoscale, ISSN 2040-3364, Vol. 6, no 1, 378-384 p.Article in journal (Refereed) Published
Iron-oxide-filled carbon nanotubes have an intriguing charge bipolarization behaviour which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties related with the applied voltage intensity. As well as, the ID/IG ratio indicated the reversibility of this process. The electric characterization indicated an electronic transport governed by two main kind of charge hopping, one between the filling and nanotube and other between the nanotube shells.
Place, publisher, year, edition, pages
2014. Vol. 6, no 1, 378-384 p.
Lithium-Ion Battery, Augmented-Wave Method, Electrical-Properties, Oxide, Nanoparticles, Temperature, Insulators, Nanotubes, Hydrogen, Oxygen
Physical Sciences Chemical Sciences
IdentifiersURN: urn:nbn:se:kth:diva-133602DOI: 10.1039/C3NR04320GISI: 000328673000044ScopusID: 2-s2.0-84890197354OAI: oai:DiVA.org:kth-133602DiVA: diva2:662423
QC 201402112013-11-072013-11-072014-02-11Bibliographically approved