Reactions Between Silicon and Graphite Substrates at High Temperature: In Situ Observations
2014 (English)In: Metallurgical and materials transactions. B, process metallurgy and materials processing science, ISSN 1073-5615, E-ISSN 1543-1916, Vol. 45, no 1, 150-160 p.Article in journal (Refereed) Published
Graphite as a refractory material has found wide application in many process steps to produce photovoltaic silicon. In the current study, the melting behavior of silicon in contact with different grades of graphite was investigated. The infiltration of silicon into graphite was found to be highly dependent on the internal structure of the graphite substrate. It was confirmed that the heating history of silicon in contact with a graphite substrate strongly influences the melting behavior, which is likely attributed to a gas-solid reaction that forms SiC at less than the liquidus temperature of silicon and alters the surface properties of the graphite. It was also observed that a concentration of CO greater than 5 pct in the inlet gas leads to SiC formation on the surface of the silicon and severely hinders melting.
Place, publisher, year, edition, pages
2014. Vol. 45, no 1, 150-160 p.
Gas-solid reaction, Graphite substrate, Heating history, High temperature, In-situ observations, Internal structure, Liquidus temperature, Melting behavior
IdentifiersURN: urn:nbn:se:kth:diva-133692DOI: 10.1007/s11663-013-9947-0ISI: 000330735200019ScopusID: 2-s2.0-84895060880OAI: oai:DiVA.org:kth-133692DiVA: diva2:662812
QC 201403112013-11-082013-11-082014-03-11Bibliographically approved