Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography
2013 (English)In: 2013 International Conference on Indium Phosphide and Related Materials (IPRM), IEEE conference proceedings, 2013, 6562592- p.Conference paper (Refereed)
We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2013. 6562592- p.
ELOG, Hall, HVPE, InP, Defect propagation, Epitaxial lateral overgrowth, High aspect ratio structures, Micro photoluminescence, Aspect ratio, Epitaxial growth, Indium, Indium phosphide, Photolithography, Silicon, Structural properties, X ray diffraction, Electric properties
IdentifiersURN: urn:nbn:se:kth:diva-133838DOI: 10.1109/ICIPRM.2013.6562592ISI: 000326658100032ScopusID: 2-s2.0-84882425360ISBN: 9781467361309ISBN: 978-1-4673-6131-6OAI: oai:DiVA.org:kth-133838DiVA: diva2:663725
IPRM 2013 25th International Conference on Indium Phosphide and Related Materials, Kobe, Japan, 19-23 May 2013
QC 201311122013-11-122013-11-112014-10-10Bibliographically approved