High-temperature characterization of 4H-SiC darlington transistors for low voltage applications
2013 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, 966-969 p.Article in journal (Refereed) Published
4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 966-969 p.
Bipolar transistor (BJT), Darlington pair, High temperature, Silicon carbide (SiC), Collector resistance, Current gains, Darlington, Darlington transistor, Low-voltage applications, Relative currents, Silicon carbides (SiC), Characterization, Silicon carbide, Bipolar transistors
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-134688DOI: 10.4028/www.scientific.net/MSF.740-742.966ISI: 000319785500230ScopusID: 2-s2.0-84874041675ISBN: 978-303785624-6OAI: oai:DiVA.org:kth-134688DiVA: diva2:667618
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg
FunderStandUpSwedish Foundation for Strategic Research
QC 20131127. QC 201603042013-11-272013-11-272016-03-04Bibliographically approved