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High-temperature characterization of 4H-SiC darlington transistors for low voltage applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2013 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 740-742, 966-969 p.Article in journal (Refereed) Published
Abstract [en]

4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. Vol. 740-742, 966-969 p.
Keyword [en]
Bipolar transistor (BJT), Darlington pair, High temperature, Silicon carbide (SiC), Collector resistance, Current gains, Darlington, Darlington transistor, Low-voltage applications, Relative currents, Silicon carbides (SiC), Characterization, Silicon carbide, Bipolar transistors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-134688DOI: 10.4028/www.scientific.net/MSF.740-742.966ISI: 000319785500230Scopus ID: 2-s2.0-84874041675ISBN: 978-303785624-6 (print)OAI: oai:DiVA.org:kth-134688DiVA: diva2:667618
Conference
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg
Funder
StandUpSwedish Foundation for Strategic Research
Note

QC 20131127. QC 20160304

Available from: 2013-11-27 Created: 2013-11-27 Last updated: 2017-12-06Bibliographically approved
In thesis
1. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
Open this publication in new window or tab >>Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. In addition, the possibility of placing integrated circuits in engine hot-sections can significantly reduce the weight and improve the reliability of automobiles and aircrafts, eliminating extra wires and cooling systems.

In order to develop such electronics semiconductors with superior high temperature characteristics compared to Si are required. Thanks to its wide bandgap,  almost three times that of Si, Silicon carbide (SiC) has been suggested for this purpose. Its low intrinsic carrier concentration, orders of magnitude lower than that of Si, makes SiC devices capable of operating at much higher temperatures than Si devices.

In this thesis solutions for 600° C SiC bipolar ICs have been investigated in depth at device physics, circuit and process integration level. Successful operation of devices and circuits  has been proven from -40 up to 600° C.

The developed technology features NPN and lateral PNP transistors, two levels of interconnects and one extra metal level acting as over-layer metallization for device contacts. The improved SiC etching and passivation procedures have provided NPN transistors with high current gain of approximately 200. Furthermore, non-monotonous current gain temperature dependences have been observed for NPN and PNP transistors. The current gain of NPN transistors increases with temperature at high enough temperatures above 300° C  depending on the base doping concentration. The current gain of lateral PNP transistors has, instead, shown a maximum of approximately 37 around 0° C.

Finally, high-temperature operation of 2-input ECL-based OR-NOR gates and  3- and 11-stage ring oscillators has been demonstrated. For the OR-NOR gates stable noise margins of approximately 1 or 1.5 V, depending on the gate design, have been observed up to 600° C with a delay-power consumption product of approximately 100 nJ in the range -40 to 500° C.  Ring oscillators with different designs, including more than 100 devices, have been  successfully tested in the range 27 to 300° C. Non-monotonous and almost constant temperature dependences have been observed for the oscillation frequency of 3- and 11-stage ring oscillator, respectively. In addition, room temperature propagation delays of a single inverter stage have been estimated to be approximately 100 and 40 ns for 3- and 11-stage ring oscillators, respectively. 

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. viii, 120 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:07
Keyword
silicon carbide (SiC), bipolar junction transistor (BJT), current gain, surface passivation, SiC etching, complementary bipolar, lateral PNP, Darlington transistors, SPICE modeling, high-temperature, integrated circuits, emitter coupled logic (ECL)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-145401 (URN)978-91-7595-135-5 (ISBN)
Public defence
2014-06-10, Sal D, Forum, Isafjordgatan 39, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20140522

Available from: 2014-05-22 Created: 2014-05-19 Last updated: 2014-05-22Bibliographically approved

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Malm, Bengt GunnarZetterling, Carl-Mikael

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Lanni, LuigiaMalm, Bengt GunnarZetterling, Carl-MikaelÖstling, Mikael
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