Modeling of the impact of parameter spread on the switching performance of parallel-connected SiC VJFETs
2013 (English)In: Materials Science Forum, Trans Tech Publications Inc., 2013, 1098-1102 p.Conference paper (Refereed)
Operation of parallel-connected 4H-SiC VJFETs from SemiSouth was measured and modeled using numerical simulations. The unbalanced current waveforms in parallel-connected VJFETs were related to spread in the critical parameters of the device structure and to the influence of the parasitic inductances in the measurement circuit. The physical device structure was reconstructed based on SEM analysis, electrical characterization, and device simulations. The two hypothetical critical design parameters that were studied with respect to spread were the p-gate doping profile (Case 1) and the emitter doping (Case 2). Variation in both parameters could be related to variation in the emitter breakdown voltage, the on-state characteristics, and the threshold voltage of the experimental devices. The switching performance of the parallel-connected JFETs was measured using a single gate driver in a double pulse test and compared with simulations. In both investigated cases a very good agreement between measurements and simulations was obtained. The modeling of the transient performance relies on good reproduction of transfer characteristics and circuit parasitics.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2013. 1098-1102 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Medici, Parallel connection, SiC, VJFET (Vertical Junction Field Effect Transistor), Critical design parameters, Critical parameter, Device simulations, Device structures, Doping profiles, Double pulse, Electrical characterization, Emitter doping, Experimental devices, Measurement circuit, On state, Parallel connections, Parallel-connected, Parasitic inductances, Parasitics, Physical devices, SEM analysis, Single gates, Switching performance, Transfer characteristics, Transient performance, Unbalanced currents, Vertical junction field effect transistors, Wave forms, Electric connectors, Field effect transistors, Heterojunction bipolar transistors, Silicon carbide
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-134687DOI: 10.4028/www.scientific.net/MSF.740-742.1098ISI: 000319785500262ScopusID: 2-s2.0-84874056771ISBN: 9783037856246OAI: oai:DiVA.org:kth-134687DiVA: diva2:668304
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg
QC 201311292013-11-292013-11-272016-02-26Bibliographically approved