Dilute bismides for near and mid-infrared applications
2013 (English)In: 2013 15th International Conference on Transparent Optical Networks (ICTON), 2013, 6602735- p.Conference paper (Refereed)
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.
Place, publisher, year, edition, pages
2013. 6602735- p.
, International Conference on Transparent Optical Networks, ISSN 2162-7339
dilute bismide, GaSbBi, infrared, InGaAsBi, InSbBi, MBE
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-136124DOI: 10.1109/ICTON.2013.6602735ScopusID: 2-s2.0-84885204245ISBN: 978-147990682-6OAI: oai:DiVA.org:kth-136124DiVA: diva2:675576
2013 15th International Conference on Transparent Optical Networks, ICTON 2013, 23 June 2013 through 27 June 2013, Cartagena
QC 201312042013-12-042013-12-032013-12-04Bibliographically approved