Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-8545-6546
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.ORCID iD: 0000-0002-0977-2598
2013 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy system. The poly-InP growth under various temperatures and dopant incorporation were investigated. A coherent InP/Si interface and poly-InP growth rate > 20 μm/hour was observed by cross-sectional scanning electron microscopy (SEM). Effective n-type sulfur doping was revealed by stain-etching. The material properties of poly-InP were characterized by powder X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), photoluminescence (PL), and Raman spectroscopy. A preferential crystalline orientation of (111) plane with substrate orientation dependent grain size was observed. Raman spectroscopy characterization at different locations on poly-InP surface reveals residual tensile strain in InP on silicon. High optical quality of poly-InP is revealed by PL measurement.

Place, publisher, year, edition, pages
2013. 437-440 p.
Keyword [en]
Heterojunction, Polycrystalline, Silicon (Si), III-V Semiconductors
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-136558DOI: 10.4229/28thEUPVSEC2013-1AV.3.32ISBN: 3-936338-33-7 (print)OAI: oai:DiVA.org:kth-136558DiVA: diva2:676388
Conference
28th European Photovoltaic Solar Energy Conference and Exhibition
Funder
Swedish Energy Agency, 2012-005966Vinnova, 2012-03318
Note

QC 20140409

Available from: 2013-12-05 Created: 2013-12-05 Last updated: 2014-04-09Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Sun, YantingLourdudoss, Sebastian

Search in DiVA

By author/editor
Sun, YantingMetaferia, WondwosenLourdudoss, Sebastian
By organisation
Semiconductor Materials, HMA
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 63 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf