Direct Heterojunction of Polycrystalline InP/Si by Hydride Vapor Phase Epitaxy for Photovoltaic Application
2013 (English)Conference paper (Refereed)
The direct heterojunction of polycrystalline InP on (001) and (111) silicon substrates was realized by indium assisted heteroepitaxy in a hydride vapor phase epitaxy system. The poly-InP growth under various temperatures and dopant incorporation were investigated. A coherent InP/Si interface and poly-InP growth rate > 20 μm/hour was observed by cross-sectional scanning electron microscopy (SEM). Effective n-type sulfur doping was revealed by stain-etching. The material properties of poly-InP were characterized by powder X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), photoluminescence (PL), and Raman spectroscopy. A preferential crystalline orientation of (111) plane with substrate orientation dependent grain size was observed. Raman spectroscopy characterization at different locations on poly-InP surface reveals residual tensile strain in InP on silicon. High optical quality of poly-InP is revealed by PL measurement.
Place, publisher, year, edition, pages
2013. 437-440 p.
Heterojunction, Polycrystalline, Silicon (Si), III-V Semiconductors
IdentifiersURN: urn:nbn:se:kth:diva-136558DOI: 10.4229/28thEUPVSEC2013-1AV.3.32ISBN: 3-936338-33-7OAI: oai:DiVA.org:kth-136558DiVA: diva2:676388
28th European Photovoltaic Solar Energy Conference and Exhibition
FunderSwedish Energy Agency, 2012-005966Vinnova, 2012-03318
QC 201404092013-12-052013-12-052014-04-09Bibliographically approved