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Evaluation of the drive circuit for a dual gate trench SiC JFET
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2013 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 946-949 p.Conference paper (Refereed)
Abstract [en]

The paper discusses the switching performance of the dual gate trench SiC JFET. In applications such as dc/dc converters, when fast switching is expected the standard totem-pole driver is not sufficient. The reason for this is that both the internal resistance and the parasitic capacitances of this device are significantly higher than for other designs. Instead, the gate driver with a dynamic current source is proposed in this paper to speed-up the switching process. Performed double-pulse measurements show improved dynamic performance of the tested DGTJFET with the new driver.

Place, publisher, year, edition, pages
2013. 946-949 p.
, Materials Science Forum, ISSN 0255-5476 ; 740-742
Keyword [en]
Current-source, Dual-gate trench (DGT) JFET, Gate driver, SiC JFET, Switching performance, Current sources, Double pulse, Drive circuits, Dual gates, Dynamic current, Dynamic performance, Fast switching, Gate drivers, Internal resistance, Parasitic capacitance, Switching process, Capacitance, DC-DC converters, Switching, Silicon carbide
National Category
Materials Engineering
URN: urn:nbn:se:kth:diva-134685DOI: 10.4028/ 000319785500225ScopusID: 2-s2.0-84874061409ISBN: 9783037856246OAI: diva2:676504
9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, 2 September 2012 through 6 September 2012, St. Petersburg

QC 20131206

Available from: 2013-12-06 Created: 2013-11-27 Last updated: 2013-12-06Bibliographically approved

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Rabkowski, JacekPeftitsis, DimosthenisNee, Hans-Peter
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