Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowth
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Semiconductor Materials, HMA.
Show others and affiliations
2013 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 3, no 11, 1960-1973 p.Article in journal (Refereed) Published
Abstract [en]

InP thin films have been grown on InP/Si substrate by epitaxial lateral overgrowth (ELOG). The nature, origin and filtering of extended defects in ELOG layers grown from single and double openings in SiO2 mask have been investigated. Whereas ELOG layers grown from double openings occasionally exhibit threading dislocations (TDs) at certain points of coalescence, TDs are completely absent in ELOG from single openings. Furthermore, stacking faults (SFs) observed in ELOG layers grown from both opening types originate not from coalescence, but possibly from formation during early stages of ELOG or simply propagate from the seed layer through the mask openings. A model describing their propagation is devised and applied to the existent conditions, showing that SFs can effectively be filtered under certain conditions. ELOG layers grown from identical patterns on InP substrate contained no defects, indicating that the defect-forming mechanism is in any case not inherent to ELOG itself.

Place, publisher, year, edition, pages
2013. Vol. 3, no 11, 1960-1973 p.
Keyword [en]
Stacking-Faults, Temperature, Gaas, Mechanism, Substrate, Gap, Generation, Reduction, Si(001), Devices
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-136499DOI: 10.1364/OME.3.001960ISI: 000326676000020Scopus ID: 2-s2.0-84888071244OAI: oai:DiVA.org:kth-136499DiVA: diva2:677285
Funder
Swedish Research CouncilSwedish Foundation for Strategic Research VinnovaKnut and Alice Wallenberg Foundation
Note

QC 20131209

Available from: 2013-12-09 Created: 2013-12-05 Last updated: 2017-12-06Bibliographically approved
In thesis
1. High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications
Open this publication in new window or tab >>High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) technology and is supported by extensive experimental results. The aimed applications are light sources on silicon for electronics-photonics integration and cost effective high efficiency multijunction solar cells.

The work focusses on the growth of III-V semiconductors consisting of indium phosphide (InP) and its related alloys on silicon primarily because of the bandgaps that these offer for the aimed applications. For this purpose, we make use of the epitaxial growth technique called hydride vapour phase epitaxy and exploit its near equilibrium operation capability to achieve primarily ELOG of high quality InP as the starting material on patterned InP(seed)/silicon wafer. The InP/InGaAsP layers are grown by metal organic vapour phase epitaxy.

Different pattern designs are investigated to achieve high quality InP over a large area of silicon by ELOG to realise lasers. First, nano patterns designed to take advantage of aspect ratio trapping of defects are investigated. Despite substantial defect filtering insufficient growth area is achieved. To achieve a larger area, coalescence from multiple nano openings is used. Shallowly etched InP/InGaAsP based microdisk resonators fabricated on indium phosphide on silicon achieved by this method have shown whispering gallery modes. However, no lasing action is observed partly due to the formation of new defects at the points of coalescence and partly due to leakage losses due to shallow etching. To overcome these limitations, a new design mimicking the futuristic monolithic evanescently coupled laser design supporting an efficient mode coupling and athermal operation is adopted to yield large areas of ELOG InP/Si having good carrier transport and optical properties. Microdisk resonators fabricated from the uniformly obtained InP/InGaAsP structures on the ELOG InP layers have shown very strong spontaneous luminescence close to lasing action. This is observed for the first time in InP/InGaAsP laser structures grown on ELOG InP on silicon.

A newly modified ELOG approach called Corrugated ELOG is also developed. Transmission electron microscopy analyses show the formation of abrupt interface between InP and silicon. Electrical measurements have supported the linear Ohmic behaviour of the above junction. This proof of concept can be applied to even other III-V compound solar cells on silicon. This allows only thin layers of expensive III-V semiconductors and cheap silicon as separate subcells for fabricating next generation multijunction solar cells with enhanced efficiencies at low cost. A feasible device structure of such a solar cell is presented. The generic nature of this technique also makes it suitable for integration of III-V light sources with silicon and one such design is proposed.

 

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. ix, 61 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610
National Category
Nano Technology Telecommunications Other Materials Engineering
Identifiers
urn:nbn:se:kth:diva-153946 (URN)978-91-7595-289-5 (ISBN)
Public defence
2014-10-31, SAL A, Electrum, Isafjordsgatan 22, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20141010

Available from: 2014-10-10 Created: 2014-10-10 Last updated: 2014-10-10Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Sun, Yan-TingLourdudoss, Sebastian

Search in DiVA

By author/editor
Junesand, CarlKataria, HimanshuMetaferia, WondwosenWang, ZhechaoSun, Yan-TingLourdudoss, Sebastian
By organisation
Semiconductor Materials, HMA
In the same journal
Optical Materials Express
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 163 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf