Improving the performance of SiGe-based IR detectors
2010 (English)In: Sige, Ge, And Related Compounds 4: Materials, Processing, And Devices, Electrochemical Society, 2010, no 6, 221-225 p.Conference paper (Refereed)
During recent years, single crystalline (Sc) SiGe has been recognized as a new low cost thermistor material for IR detection. In this study the effect of Ge content, pixel size and the Ni silicide on the performance of SiGe/Si thermistor material have been presented. The noise level was decreased for more than one order of magnitude when the Ni silicide layer was integrated below the metal contacts. The silicidation slightly improved TCR values for the detectors(+0.22%/K). However, Increasing the Ge content had the most significant effect on the TCR. A statistical analysis was applied to evaluate the effect of each parameter. It was found using the factorial method that decreasing the pixel size will enhance the TCR value.
Place, publisher, year, edition, pages
Electrochemical Society, 2010. no 6, 221-225 p.
, ECS Transactions, ISSN 1938-5862 ; 33
Factorial methods, Ge content, IR detector, Low costs, Metal contacts, Ni silicide, Noise levels, Order of magnitude, Pixel size, SiGe/Si, Silicidation, Single-crystalline, Statistical analysis, Thermistor materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-138111DOI: 10.1149/1.3487552ISI: 000314957600023ScopusID: 2-s2.0-79952673358ISBN: 978-1-60768-175-5OAI: oai:DiVA.org:kth-138111DiVA: diva2:680487
4th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 218th Meeting of the Electrochemical-Society (ECS), OCT 10-15, 2010, Las Vegas, NV
QC 201312182013-12-182013-12-182013-12-18Bibliographically approved