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Improving the performance of SiGe-based IR detectors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2010 (English)In: Sige, Ge, And Related Compounds 4: Materials, Processing, And Devices, Electrochemical Society, 2010, no 6, 221-225 p.Conference paper, Published paper (Refereed)
Abstract [en]

During recent years, single crystalline (Sc) SiGe has been recognized as a new low cost thermistor material for IR detection. In this study the effect of Ge content, pixel size and the Ni silicide on the performance of SiGe/Si thermistor material have been presented. The noise level was decreased for more than one order of magnitude when the Ni silicide layer was integrated below the metal contacts. The silicidation slightly improved TCR values for the detectors(+0.22%/K). However, Increasing the Ge content had the most significant effect on the TCR. A statistical analysis was applied to evaluate the effect of each parameter. It was found using the factorial method that decreasing the pixel size will enhance the TCR value.

Place, publisher, year, edition, pages
Electrochemical Society, 2010. no 6, 221-225 p.
Series
ECS Transactions, ISSN 1938-5862 ; 33
Keyword [en]
Factorial methods, Ge content, IR detector, Low costs, Metal contacts, Ni silicide, Noise levels, Order of magnitude, Pixel size, SiGe/Si, Silicidation, Single-crystalline, Statistical analysis, Thermistor materials
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-138111DOI: 10.1149/1.3487552ISI: 000314957600023Scopus ID: 2-s2.0-79952673358ISBN: 978-1-60768-175-5 (print)OAI: oai:DiVA.org:kth-138111DiVA: diva2:680487
Conference
4th SiGe, Ge, and Related Compounds - Materials, Processing and Devices Symposium held at the 218th Meeting of the Electrochemical-Society (ECS), OCT 10-15, 2010, Las Vegas, NV
Note

QC 20131218

Available from: 2013-12-18 Created: 2013-12-18 Last updated: 2013-12-18Bibliographically approved

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CiteExportLink to record
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  • apa
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