High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O
2013 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 160, no 11, D538-D542 p.Article in journal (Refereed) Published
A novel process for atomic layer deposition of thulium oxide (Tm2O3) has been developed, employing TmCp3 as metal precursor and H2O as oxidizing agent. The use of a highly reactive oorganometallic precursor eliminates the need for a strong oxidizing agent (such as O-3) and provides a high deposition rate of similar to 1.5 angstrom/cycle. A thorough characterization of the process has been performed, identifying true ALD-type film growth in the temperature range 200-300 degrees C. The ALD process has been further investigated by extensive physical and electrical characterization of the deposited films in terms of-composition, crystalline phase, surface roughness and extraction of the dielectric constant. The films were found to be oxygen-rich Tm2O3, with low carbon impurity content at low deposition temperature and after annealing at 600 degrees C. The developed process produced polycrystalline films, with a surface roughness <1 nm RMS. Integration in MOS capacitors demonstrated well-behaved CV curves after annealing at 600 degrees C, with a relative dielectric constant of similar to 16.
Place, publisher, year, edition, pages
2013. Vol. 160, no 11, D538-D542 p.
Chemical-Vapor-Deposition, Gate Dielectrics, Thin-Films, Precursors, Microelectronics, Kappa
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-138392DOI: 10.1149/2.056311jesISI: 000326905000065ScopusID: 2-s2.0-84894800590OAI: oai:DiVA.org:kth-138392DiVA: diva2:681848
FunderEU, European Research Council, 228229 OSIRIS
QC 201312202013-12-202013-12-192014-05-12Bibliographically approved