Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
High-Deposition-Rate Atomic Layer Deposition of Thulium Oxide from TmCp3 and H2O
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT).
Show others and affiliations
2013 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 160, no 11, D538-D542 p.Article in journal (Refereed) Published
Abstract [en]

A novel process for atomic layer deposition of thulium oxide (Tm2O3) has been developed, employing TmCp3 as metal precursor and H2O as oxidizing agent. The use of a highly reactive oorganometallic precursor eliminates the need for a strong oxidizing agent (such as O-3) and provides a high deposition rate of similar to 1.5 angstrom/cycle. A thorough characterization of the process has been performed, identifying true ALD-type film growth in the temperature range 200-300 degrees C. The ALD process has been further investigated by extensive physical and electrical characterization of the deposited films in terms of-composition, crystalline phase, surface roughness and extraction of the dielectric constant. The films were found to be oxygen-rich Tm2O3, with low carbon impurity content at low deposition temperature and after annealing at 600 degrees C. The developed process produced polycrystalline films, with a surface roughness <1 nm RMS. Integration in MOS capacitors demonstrated well-behaved CV curves after annealing at 600 degrees C, with a relative dielectric constant of similar to 16.

Place, publisher, year, edition, pages
2013. Vol. 160, no 11, D538-D542 p.
Keyword [en]
Chemical-Vapor-Deposition, Gate Dielectrics, Thin-Films, Precursors, Microelectronics, Kappa
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-138392DOI: 10.1149/2.056311jesISI: 000326905000065Scopus ID: 2-s2.0-84894800590OAI: oai:DiVA.org:kth-138392DiVA: diva2:681848
Funder
EU, European Research Council, 228229 OSIRIS
Note

QC 20131220

Available from: 2013-12-20 Created: 2013-12-19 Last updated: 2017-12-06Bibliographically approved
In thesis
1. Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
Open this publication in new window or tab >>Integration of thulium silicate for enhanced scalability of high-k/metal gate CMOS technology
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

High-k/metal gate stacks have been introduced in CMOS technology during the last decade in order to sustain continued device scaling and ever-improving circuit performance. Starting from the 45 nm technology node, the stringent requirements in terms of equivalent oxide thickness and gate current density have rendered the replacement of the conventional SiON/poly-Si stack unavoidable. Although Hf-based technology has become the de facto industry standard for high-k/metal gate MOSFETs, problematic long-term scalability has motivated the research of novel materials and solutions to fulfill the target performances expected of gate stacks in future technology nodes.

In this work, integration of a high-k interfacial layer has been identified as the most promising approach to improve gate dielectric scalability, since this technology presents the advantage of potential compatibility with both current Hf-based and plausible future higher-k materials. Thulium silicate has been selected as candidate material for integration as interfacial layer, thanks to its unique properties which enabled the development of a straightforward integration process achieving well-controlled and repeatable growth in the sub-nm thickness regime, a contribution of 0.25+-0.15 nm to the total EOT, and high quality of the interface with Si.

Compatibility with industry-standard CMOS integration flows has been kept as a top priority in the development of the new technology. To this aim, a novel ALD process has been developed and characterized, and a manufacturable process flow for integration of thulium silicate in a generic gate stack has been designed. The thulium silicate interfacial layer technology has been verified to be compatible with standard integration flows, and fabrication of high-k/metal gate MOSFETs with excellent electrical characteristics has been demonstrated.

The possibility to achieve high performance devices by integration of thulium silicate in current Hf-based technology has been specifically demonstrated, and the TmSiO/HfO2 dielectric stack has been shown to be compatible with the industrial requirements of operation in the sub-nm EOT range (down to 0.6 nm), reliable device operation over a 10 year expected lifetime, and compatibility with common threshold voltage control techniques. The thulium silicate interfacial layer technology has been especially demonstrated to be superior to conventional chemical oxidation in terms of channel mobility at sub-nm EOT, since the TmSiO/HfO2 dielectric stack achieved ~20% higher electron and hole mobility compared to state-of-the-art SiOx/HfO2 devices at the same EOT. Such performance enhancement can provide a strong advantage in the EOT-mobility trade-off which is commonly observed in scaled gate stacks, and has been linked by temperature and stress analyses to the higher physical thickness of the high-k interfacial layer, which results in attenuated remote phonon scattering compared to a SiOx interfacial layer achieving the same EOT.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. xv, 107 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:06
Keyword
thulium, silicate, TmSiO, Tm2O3, interfacial layer, IL, CMOS, high-k, ALD
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-145116 (URN)978-91-7595-115-7 (ISBN)
Public defence
2014-05-27, Sal D, Forum, KTH, Isafjordsgatan 39, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20140512

Available from: 2014-05-12 Created: 2014-05-08 Last updated: 2016-12-22Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Dentoni Litta, EugenioHellström, Per-ErikHallén, Anders

Search in DiVA

By author/editor
Dentoni Litta, EugenioHellström, Per-ErikHenkel, ChristophValerio, SvenHallén, AndersÖstling, Mikael
By organisation
Integrated Devices and CircuitsSchool of Information and Communication Technology (ICT)
In the same journal
Journal of the Electrochemical Society
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 117 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf