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SiC device technology for energy efficiency and high temperature operation
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2013 (English)In: 2013 IEEE International Conference of Electron Devices and Solid-State Circuits: EDSSC 2013, 2013Conference paper, Published paper (Refereed)
Abstract [en]

This paper will give a brief overview of current state of the art device technology for SiC discrete devices and applications. The superior energy efficiency of SiC devices will be demonstrated and compared to its silicon counterparts.

Place, publisher, year, edition, pages
2013.
Series
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Keyword [en]
devices, high voltage, low loss, Silicon Carbide, Switch, transistor
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-139135DOI: 10.1109/EDSSC.2013.6628179Scopus ID: 2-s2.0-84890485106ISBN: 9781467325233 (print)OAI: oai:DiVA.org:kth-139135DiVA: diva2:685421
Conference
2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013; Hong Kong, Hong Kong, 3-5 June 2013
Note

QC 20140109

Available from: 2014-01-09 Created: 2014-01-07 Last updated: 2014-01-23Bibliographically approved

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