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Room-temperature operation of 980-nm transistor-vertical-cavity surface-emitting lasers
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-9040-4740
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2013 (English)In: 2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013, IEEE , 2013, 141-142 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report on the design, fabrication and characterization of pnp-type 980-nm transistor-vertical-cavity surface-emitting lasers (T-VCSELs). Using an epitaxial regrowth process and a triple-intracavity current injection scheme we demonstrate static performance levels quite comparable to those of conventional VCSELs, including sub-mA threshold base current, mW-range output power and continuous-wave operation at least up to 50°C.

Place, publisher, year, edition, pages
IEEE , 2013. 141-142 p.
Keyword [en]
transistor laser, transistor VCSEL, VCSEL
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-139896DOI: 10.1109/ICAIT.2013.6621535ISI: 000342413300064Scopus ID: 2-s2.0-84888250896ISBN: 978-147990465-5 (print)OAI: oai:DiVA.org:kth-139896DiVA: diva2:688197
Conference
2013 IEEE 6th International Conference on Advanced Infocomm Technology, ICAIT 2013; Hsinchu; Taiwan; 6 July 2013 through 9 July 2013
Note

QC 20140116

Available from: 2014-01-16 Created: 2014-01-15 Last updated: 2014-11-03Bibliographically approved
In thesis
1. Developments for Improved Performance Vertical-Cavity Surface Emitting Lasers
Open this publication in new window or tab >>Developments for Improved Performance Vertical-Cavity Surface Emitting Lasers
2014 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

The vertical-cavity surface-emitting laser (VCSEL) is a type of laser diode that emits light from the surface of the chip from which it is manufactured rather than from a cleaved edge as so far has been common for most telecommunication lasers. VCSEL’s low cost, high power efficiency and low power consumption properties make it a very attractive signal source for many applications such as fiber optical communication, optical interconnects, 3D sensing, absorption spectroscopy, laser printing, etc.

In this work, we have developed and evaluated new designs and technologies for extending the performance of VCSELs based on the GaAs material system. A novel scheme for single-mode emission from large size VCSELs, with active region size up to 10 μm, is proposed and discussed. Oxide-free designs of the VCSEL structure either based on an epitaxially regrown p-n-p layer or a buried tunnel junction (BTJ) for lateral current confinement are fabricated and characterized; the latter scheme yielding significant dynamic and static performance improvement as compared to epitaxially regrown design. In addition, the first room-temperature operation of a heterojunction bipolar transistor (HBT) 980nm VCSEL, a so-called transistor-VCSEL, is demonstrated. This novel three-terminal operational VCSEL is believed to have the potential for a ultrahigh modulation bandwidth due to altered carrier dynamics in the cavity region.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. 61 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:11
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-146641 (URN)978-91-7595-164-5 (ISBN)
Presentation
2014-06-13, Sal/hall D, KTH-ICT, Isafjordgatan 39, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20140612

Available from: 2014-06-12 Created: 2014-06-12 Last updated: 2014-06-13Bibliographically approved

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Hammar, Mattias

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