Fabrication of nanostructured bulk cobalt antimonide (CoSb3) based skutterudites via bottom-up synthesis
2013 (English)In: Thermoelectric Materials Research and Device Development for Power Conversion and Refrigeration: symposium held November 25-30, 2012, Boston, Mass., Materials Research Society, 2013, 121-126 p.Conference paper (Refereed)
Skutterudites are known to be efficient thermoelectric (TE) materials in the temperature range from 600 K to 900 K. Dimensionless figure of merit (ZT) for filled skutterudite TE materials have been reported as ca. 1 at 800 K. Novel nano- engineering approaches and filling of the skutterudites crystal can further improve the transport properties and ultimately the ZT. Although classified among the promising TE materials, research on their large-scale production via bottom up synthetic routes is rather limited. In this work, large quantity of cobalt antimonide (CoSb3) based skutterudites nanopowder (NP) was fabricated through a room temperature coprecipitation precursor method. Dried precipitates were process by thermo-chemical treatment steps including calcination (in air) and reduction (in hydrogen). CoSb3 NPs were then mixed with silver (Ag) nanopanicles at different weight percentages (1%, 5% and 10% by wt) to form nanocomposites. Skutterudite NP was then consolidated by Spark Plasma Sintering (SPS) technique to produce highly dense compacts while maintaining the nanostructure. Temperature dependent TE characteristics of SPS'd CoSb3 and Ag containing nanocomposite samples were evaluated for transport properties, including thermal conductivity, electrical conductivity and Seebeck coefficient over the temperature range of 300-900 K. Physicochemical, structural and microstructural evaluation results are presented in detail.
Place, publisher, year, edition, pages
Materials Research Society, 2013. 121-126 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1490
Bottom up synthesis, Cobalt antimonide, Nanostructured, Skutterudite, Spark plasma sintering, Thermoelectric
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-139903DOI: 10.1557/opl.2012.1643ScopusID: 2-s2.0-84888069689ISBN: 978-160511467-5OAI: oai:DiVA.org:kth-139903DiVA: diva2:688264
2012 MRS Fall Meeting; Boston, MA; United States; 25 November 2012 through 30 November 2012
QC 201401162014-01-162014-01-152014-01-16Bibliographically approved