Graphene base hot electron transistors with high on/off current ratios
2013 (English)In: Dev. Res. Conf. Conf. Dig., IEEE conference proceedings, 2013, 39-40 p.Conference paper (Refereed)
Despite exceptional intrinsic properties of graphene, field effect transistors with graphene channels (GFETs) are limited by the absence of an electronic band gap. The resulting low ION-IOFF ratio and low output resistance makes GFETs unsuitable for logic applications  and limits radio frequency (RF) applications . We will present a graphene-based electronic device in which the 0 eV band gap does not limit the device performance: a hot electron transistor (HET) with a graphene base (Graphene Base Transistor, GBT) [3,4]. The single-atomic thinness and high conductivity are decisive advantages of a graphene base . Here, we report on the fabrication and full DC-characterization of GBTs with high ION-IOFF ratio of 105.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2013. 39-40 p.
, Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-139424DOI: 10.1109/DRC.2013.6633784ISI: 000347466000028ScopusID: 2-s2.0-84890035298ISBN: 9781479908110OAI: oai:DiVA.org:kth-139424DiVA: diva2:688340
71st Device Research Conference, DRC 2013, 23 June 2013 through 26 June 2013, Notre Dame, IN
QC 201401162014-01-162014-01-132015-12-03Bibliographically approved