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Graphene base hot electron transistors with high on/off current ratios
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
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2013 (English)In: Dev. Res. Conf. Conf. Dig., IEEE conference proceedings, 2013, 39-40 p.Conference paper, Published paper (Refereed)
Abstract [en]

Despite exceptional intrinsic properties of graphene, field effect transistors with graphene channels (GFETs) are limited by the absence of an electronic band gap. The resulting low ION-IOFF ratio and low output resistance makes GFETs unsuitable for logic applications [1] and limits radio frequency (RF) applications [2]. We will present a graphene-based electronic device in which the 0 eV band gap does not limit the device performance: a hot electron transistor (HET) with a graphene base (Graphene Base Transistor, GBT) [3,4]. The single-atomic thinness and high conductivity are decisive advantages of a graphene base [5]. Here, we report on the fabrication and full DC-characterization of GBTs with high ION-IOFF ratio of 105.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2013. 39-40 p.
Series
Device Research Conference - Conference Digest, DRC, ISSN 1548-3770
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-139424DOI: 10.1109/DRC.2013.6633784ISI: 000347466000028Scopus ID: 2-s2.0-84890035298ISBN: 9781479908110 (print)OAI: oai:DiVA.org:kth-139424DiVA: diva2:688340
Conference
71st Device Research Conference, DRC 2013, 23 June 2013 through 26 June 2013, Notre Dame, IN
Note

QC 20140116

Available from: 2014-01-16 Created: 2014-01-13 Last updated: 2015-12-03Bibliographically approved

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Vaziri, Sam

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CiteExportLink to record
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Citation style
  • apa
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  • vancouver
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