Dual-Function Gate Driver for a Power Module With SiC Junction Field-Effect Transistors
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2367-2379 p.Article in journal (Refereed) Published
Silicon Carbide high-power modules populated with several parallel-connected junction field-effect transistors must be driven properly. Parasitic elements could act as drawbacks in order to achieve fast and oscillation-free switching performance, which are the main goals. These two requirements are related closely to the design of the gate-drive unit, and they must be kept under certain limits when high efficiencies are targeted. This paper deeply investigates several versions of gate-drive units and proposes a dual-function gate-drive unit which is able to switch the module with an acceptable speed without letting the current suffer from significant oscillations. It is experimentally shown that turn-on and turn-off switching times of approximately 130 and 185 ns respectively can be reached, while the magnitude of the current oscillations is kept at an adequate level. Moreover, using the proposed gate driver an efficiency of approximately 99.7% is expected for a three-phase converter rated at 125 kVA and having a switching frequency of 2 kHz.
Place, publisher, year, edition, pages
IEEE , 2014. Vol. 29, no 5, 2367-2379 p.
Gate driver, junction field effect transistor, power module, silicone carbide
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-141276DOI: 10.1109/TPEL.2013.2277616ISI: 000329991500024ScopusID: 2-s2.0-84893083630OAI: oai:DiVA.org:kth-141276DiVA: diva2:696122
QC 201402132014-02-132014-02-132016-09-16Bibliographically approved