A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2408-2417 p.Article in journal (Refereed) Published
Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter.
Place, publisher, year, edition, pages
2014. Vol. 29, no 5, 2408-2417 p.
Bipolar junction transistor (BJT), base driver, discretized base driver, driver, proportional base driver, proportional driver, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-141277DOI: 10.1109/TPEL.2013.2274331ISI: 000329991500027ScopusID: 2-s2.0-84893146106OAI: oai:DiVA.org:kth-141277DiVA: diva2:696124
QC 201402132014-02-132014-02-132015-05-29Bibliographically approved