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A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
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2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2408-2417 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter.

Place, publisher, year, edition, pages
2014. Vol. 29, no 5, 2408-2417 p.
Keyword [en]
Bipolar junction transistor (BJT), base driver, discretized base driver, driver, proportional base driver, proportional driver, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-141277DOI: 10.1109/TPEL.2013.2274331ISI: 000329991500027Scopus ID: 2-s2.0-84893146106OAI: oai:DiVA.org:kth-141277DiVA: diva2:696124
Note

QC 20140213

Available from: 2014-02-13 Created: 2014-02-13 Last updated: 2017-12-06Bibliographically approved
In thesis
1. High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
Open this publication in new window or tab >>High-Efficiency SiC Power Conversion: Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. From a system point of view the SiC power device could decrease the cost and complexity of cooling, reduce the size and weight of the system, and enable the system to endure harsher environments.

The three main SiC power device designs are discussed with a focus on the BJT. The SiC BJT is compared to the SiC junction field-effect transistor (JFET) and the metal-oxide semiconductor field-effect transistor (MOSFET). The potential of employing SiC power devices in applications, ranging from induction heating to high-voltage direct current (HVDC), is presented.

The theory behind the state-of-the-art dual-source (2SRC) base driver that was presented by Rabkowski et al. a few years ago is described. This concept of proportional base drivers is introduced with a focus on the discretized proportional base drivers (DPBD). By implementing the DPBD concept and building a prototype it is shown that the steady-state consumption of the base driver can be reduced considerably.

 The aspects of the reverse conduction of the SiC BJT are presented. It is shown to be of importance to consider the reduced voltage drop over the base-emitter junction.

Last the impact of SiC unipolar and bipolar devices in series-resonant (SLR) converters is presented. Two full-bridges are designed and constructed, one with SiC MOSFETs utilizing the body diode for reverse conduction during the dead-time, and the second with SiC BJTs with anti-parallel SiC Schottky diodes. It is found that the SiC power devices, with their absence of tail current, are ideal devices to fully utilize the soft-switching properties that the SLR converters offer. The SiC MOSFET benefits from its possibility to utilize reverse conduction with a low voltage drop. It is also found that the size of capacitance of the snubbers can be reduced compare to state-of-the-art silicon technology. High switching frequencies of 200 kHz are possible while still keeping the losses low. A dead-time control strategy for each device is presented. The dual control (DuC) algorithm is tested with the SiC devices and compared to frequency modulation (FM).

The analytical investigations presented in this thesis are confirmed by experimental results on several laboratory prototype converters.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xiv, 71 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2015:024
Keyword
Silicon Carbide, Bipolar Junction Transistor (BJT), Resonant converter, Series-resonant converter (SLR), Base drive circuits, High- Efficiency Converters, High-Frequency Converters
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-168163 (URN)978-91-7595-601-5 (ISBN)
Public defence
2015-06-12, H1, Teknikringen 33, KTH, Stockholm, 09:45 (English)
Opponent
Supervisors
Note

QC 20150529

Available from: 2015-05-29 Created: 2015-05-27 Last updated: 2015-05-29Bibliographically approved

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Tolstoy, GeorgNee, Hans-Peter

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