Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2482-2491 p.Article in journal (Refereed) Published
This paper describes issues related to parallel connection of SiC bipolar junction transistors (BJTs) in discrete packages. The devices are applied in a high-frequency dc/dc boost converter where the switching losses significantly exceed the conduction losses. The design and construction of the converter is discussed-with special emphasis on successful parallel-operation of the discrete BJTs. All considerations are experimentally illustrated by a 6-kW, 250-kHz boost converter (300 V/600 V). A special solution for the base-drive unit, based on the dual-source driver concept, is also shown in this paper. The performance of this driver and the current sharing of the BJTs are both presented. The power losses and thermal performance of the parallel-connected transistors have been determined experimentally for different powers and switching frequencies. An efficiency of 98.23% (+/- 0.02%) was measured using a calorimetric setup, while the maximum temperature difference among the four devices is 12 degrees C.
Place, publisher, year, edition, pages
2014. Vol. 29, no 5, 2482-2491 p.
Bipolar junction transistor (BJT), dc/dc boost converter, parallel-connected switches, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-141278DOI: 10.1109/TPEL.2013.2283083ISI: 000329991500034ScopusID: 2-s2.0-84893134918OAI: oai:DiVA.org:kth-141278DiVA: diva2:696125
QC 201402132014-02-132014-02-132014-03-05Bibliographically approved