Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0002-1755-1365
2014 (English)In: IEEE transactions on power electronics, ISSN 0885-8993, E-ISSN 1941-0107, Vol. 29, no 5, 2482-2491 p.Article in journal (Refereed) Published
Abstract [en]

This paper describes issues related to parallel connection of SiC bipolar junction transistors (BJTs) in discrete packages. The devices are applied in a high-frequency dc/dc boost converter where the switching losses significantly exceed the conduction losses. The design and construction of the converter is discussed-with special emphasis on successful parallel-operation of the discrete BJTs. All considerations are experimentally illustrated by a 6-kW, 250-kHz boost converter (300 V/600 V). A special solution for the base-drive unit, based on the dual-source driver concept, is also shown in this paper. The performance of this driver and the current sharing of the BJTs are both presented. The power losses and thermal performance of the parallel-connected transistors have been determined experimentally for different powers and switching frequencies. An efficiency of 98.23% (+/- 0.02%) was measured using a calorimetric setup, while the maximum temperature difference among the four devices is 12 degrees C.

Place, publisher, year, edition, pages
2014. Vol. 29, no 5, 2482-2491 p.
Keyword [en]
Bipolar junction transistor (BJT), dc/dc boost converter, parallel-connected switches, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-141278DOI: 10.1109/TPEL.2013.2283083ISI: 000329991500034Scopus ID: 2-s2.0-84893134918OAI: oai:DiVA.org:kth-141278DiVA: diva2:696125
Note

QC 20140213

Available from: 2014-02-13 Created: 2014-02-13 Last updated: 2017-12-06Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Nee, Hans-Peter

Search in DiVA

By author/editor
Rabkowski, JacekPeftitsis, DimosthenisNee, Hans-Peter
By organisation
Electrical Energy Conversion
In the same journal
IEEE transactions on power electronics
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 63 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf