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B-doped SIGE(C) materials for high performance devices
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2011 (English)In: Boron: Compounds, Production and Application / [ed] Gary L. Perkins, Nova Science Publishers, Inc., 2011, 295-326 p.Chapter in book (Refereed)
Abstract [en]

B-doping of group IV materials using B2H6 is widely performed in chemical vapor deposition (CVD) technique. The B-doped SiGe layers are grown epitaxially as the base layer in HBTs for increased frequency performance in mixed signal radio frequency (RF) applications. These layers may also apply as a stressor material in source/drain of pMOSFETs for higher carrier mobility in a uniaxially strained channel. Furthermore, contact layers performance in terms of thermal stability and resistivity are improved by adopting highly boron doped (B-doped) layers in various electronic components. However, high diffusion of boron can limit the thermal budget for fabrication of the devices. One way to suppress this problem is integration of carbon in B-doped layers where the carbon diffuses out but boron stays in the SiGe layers. Therefore, growing highly B-doped group IV materials with high thermal stability and layer quality is a challenging issue. This chapter deals with growth kinetics, dopant incorporation, thermal stability, strain compensation, strain relaxation and defect formation of B-doped SiGe layers grown by reduced pressure CVD. The ion implantation and some of its processing issues regarding B-doping will be discussed.

Place, publisher, year, edition, pages
Nova Science Publishers, Inc., 2011. 295-326 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-141869Scopus ID: 2-s2.0-84892120203ISBN: 978-161761760-7 OAI: oai:DiVA.org:kth-141869DiVA: diva2:699157
Note

QC 20140226

Available from: 2014-02-26 Created: 2014-02-25 Last updated: 2014-02-26Bibliographically approved

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