Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon
2014 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 20, no 4, 8201407- p.Article in journal (Refereed) Published
In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO2/Si/SiO2 waveguide necessary to couple light from the gain medium on its top, we adopt a similar to 2 mu m thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (similar to 1. 55 mu m) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip.
Place, publisher, year, edition, pages
2014. Vol. 20, no 4, 8201407- p.
Monolithic integration of III-Vs on Si, integrated photonics, III-V lasers on Si, ELOG
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-141954DOI: 10.1109/JSTQE.2013.2294453ISI: 000330317900027ScopusID: 2-s2.0-84957883633OAI: oai:DiVA.org:kth-141954DiVA: diva2:699639
FunderSwedish Research CouncilKnut and Alice Wallenberg Foundation
QC 201402282014-02-282014-02-272014-10-10Bibliographically approved