Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
Show others and affiliations
2001 (English)In: Applied Physics Letters, Vol. 79, no 12, 1885-1887 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2001. Vol. 79, no 12, 1885-1887 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-142833OAI: oai:DiVA.org:kth-142833DiVA: diva2:704542
Note

QC 20100525

NR 20140805Available from: 2014-03-12 Created: 2014-03-12 Last updated: 2014-03-12Bibliographically approved

Open Access in DiVA

No full text

Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 22 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf