Fabrication of electrically-pumped resonance-cavity membrane-reflector surface-emitters on silicon
2013 (English)In: 2013 IEEE Photonics Conference (IPC), 2013, 643-644 p.Conference paper (Refereed)
Various lasers and light sources on Si via heterogeneous integration of Si/III-V have been reported based on direct growth on Si  or wafer bonding technology [2-4]. We reported earlier optically-pumped Si membrane-reflector vertical-cavity surface-emitting lasers (MRVCSELs) fabricated by low-temperature membrane transfer printing processes [5, 6]. Here we report electrically-pumped devices based on an intra-cavity contact configuration.
Place, publisher, year, edition, pages
2013. 643-644 p.
Direct growth, Electrically-pumped, Heterogeneous integration, Intracavities, Low temperatures, Membrane transfers, Vertical-cavity surface emitting laser, Waferbonding technology
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-143133DOI: 10.1109/IPCon.2013.6656459ScopusID: 2-s2.0-84892757191ISBN: 978-145771507-5OAI: oai:DiVA.org:kth-143133DiVA: diva2:705846
2013 26th IEEE Photonics Conference, IPC 2013; Bellevue, WA; United States; 8 September 2013 through 12 September 2013
QC 201403182014-03-182014-03-172014-03-18Bibliographically approved