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Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
2003 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 94, no 4, 2746-2748 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
2003. Vol. 94, no 4, 2746-2748 p.
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Condensed Matter Physics
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URN: urn:nbn:se:kth:diva-143797OAI: oai:DiVA.org:kth-143797DiVA: diva2:708681
Note
NR 20140805Available from: 2014-03-28 Created: 2014-03-28 Last updated: 2017-12-05Bibliographically approved

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