Advances in wide bandgap SiC for optoelectronics
2014 (English)In: European Physical Journal B: Condensed Matter Physics, ISSN 1434-6028, E-ISSN 1434-6036, Vol. 87, no 3, 58- p.Article in journal (Refereed) Published
Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the polycrystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.
Place, publisher, year, edition, pages
2014. Vol. 87, no 3, 58- p.
Chemical-Vapor-Deposition, Antireflective Subwavelength Structures, Sublimation Sandwich Method, Silicon-Carbide Surface, Acceptor-Pair Emission, Light-Emitting Diode, Epitaxial-Growth, Broad-Band, Layers, Transport
IdentifiersURN: urn:nbn:se:kth:diva-144118DOI: 10.1140/epjb/e2014-41100-0ISI: 000332697900001ScopusID: 2-s2.0-84897810808OAI: oai:DiVA.org:kth-144118DiVA: diva2:712199
FunderSwedish Energy AgencySwedish Research Council, 2009-5307
QC 201404142014-04-142014-04-102014-04-14Bibliographically approved