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Electrical contacts, Ohmic and Schottky, to 4H-Silicon Carbide for device applications
KTH, Superseded Departments, Electrical Systems.
2000 (English)Licentiate thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Stockholm: Elektrotekniska system , 2000. , iii, 56 p.
Trita-EKT, ISSN 1650-8599 ; 2000:4
Keyword [en]
silicon carbice, Ohmic, Schottky contacts, co-evaporation, current-voltage, capacitance-voltage measurement, power device, 4H-SiC, TLM
URN: urn:nbn:se:kth:diva-1318OAI: diva2:7138
NR 20140805Available from: 2001-10-23 Created: 2001-10-23Bibliographically approved

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