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Memory resistive switching in CeO2-based film microstructures patterned by a focused ion beam
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2014 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 556, 520-524 p.Article in journal (Refereed) Published
Abstract [en]

Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting or metallic low resistance state (ON) with resistance ratios up to 10(4). The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown.

Place, publisher, year, edition, pages
2014. Vol. 556, 520-524 p.
Keyword [en]
Oxide heterostructure, Memory resistive switching, Focused ion beam
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URN: urn:nbn:se:kth:diva-144534DOI: 10.1016/j.tsf.2014.01.053ISI: 000333085700083Scopus ID: 2-s2.0-84896404802OAI: oai:DiVA.org:kth-144534DiVA: diva2:714461
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QC 20140428

Available from: 2014-04-28 Created: 2014-04-24 Last updated: 2017-12-05Bibliographically approved

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Khartsev, Sergiy

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Grishin, AlexanderKhartsev, SergiyYar, Mazher AhmedMuhammed, Mamoun
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