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Fabrication of a SiC double gate vertical channel jfet and it's application in power electronics
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2012 (English)In: Gallium nitride and silicon carbide power technologies 2, Electrochemical Society, 2012, no 3, 45-52 p.Conference paper, Published paper (Refereed)
Abstract [en]

The fabrication process of an innovative epitaxial trench JFET with vertical channel and double gate control is reviewed. Due to the excellent doping and thickness control of the epitaxial regrowth techniques, the sub-micron channel can be tailored for normally-on and -off operation. Due to the vertical channel design the epitaxial trench JFETs have narrow cell pitch for high-density power integration and high saturation current capabilities. The excellent performance of these fabricated and packaged JFET devices is demonstrated with on-wafer measurements and power switching tests. High current conduction tests are performed at room temperature and elevated temperatures of 125°C with switching frequencies of 30 kHz and 200 kHz.

Place, publisher, year, edition, pages
Electrochemical Society, 2012. no 3, 45-52 p.
Series
ECS Transactions, ISSN 1938-5862 ; 50
Keyword [en]
Elevated temperature, Epitaxial regrowth, Fabrication process, High saturation current, On-wafer measurements, Power Integrations, Room temperature, Vertical channels
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-144799DOI: 10.1149/05003.0045ecstISI: 000337755900005Scopus ID: 2-s2.0-84885781942ISBN: 978-160768351-3 (print)OAI: oai:DiVA.org:kth-144799DiVA: diva2:714835
Conference
2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting; Honolulu, HI; United States; 7 October 2012 through 12 October 2012
Note

QC 20140429

Available from: 2014-04-29 Created: 2014-04-29 Last updated: 2015-10-06Bibliographically approved

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CiteExportLink to record
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  • apa
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