Nanostructuring of GaAs with tailored topologies using colloidal lithography and dry etching
2014 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 32, no 2, 021801- p.Article in journal (Refereed) Published
The authors report on the fabrication of GaAs nanopillars with different profiles/topologies using colloidal lithography and dry etching. GaAs nanopillars with different shapes and dimensions were successfully fabricated using inductively coupled plasma reactive ion etching. Two different etch chemistries CH4/H-2/Cl-2 and Ar/Cl-2 were investigated. The fabricated nanopillar arrays had a typical period of similar to 500 nm, and the depths could be varied from a few nanometers to 4 mu m. The CH4/H-2/Cl-2 chemistry with optimized gas flows and plasma powers is shown to produce nanopillars with smooth sidewalls compared to those fabricated with the Ar/Cl-2 chemistry. The GaAs nanopillar arrays have appreciably lower reflectivities in the measured wavelength range from 400 to 850 nm and are typically one order of magnitude lower compared to planar GaAs, which shows their potential for photovoltaic applications.
Place, publisher, year, edition, pages
2014. Vol. 32, no 2, 021801- p.
Nanowire Solar-Cells, High Optical-Quality, 2nd-Harmonic Generation, Fabrication, Light, Nanopillars, Arrays
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-144958DOI: 10.1116/1.4862976ISI: 000333560600046OAI: oai:DiVA.org:kth-144958DiVA: diva2:715396
FunderSwedish Research CouncilEU, FP7, Seventh Framework Programme
QC 201405052014-05-052014-05-052014-11-04Bibliographically approved