Highly polarized photoluminescence and its dynamics in semipolar (20(2)over-bar(1)over-bar) InGaN/GaN quantum well
2014 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 104, no 11, 111113- p.Article in journal (Refereed) Published
Very high polarization degree of 0.98, considerably larger than theoretical predictions, has been measured in (20 (2) over bar(1) over bar) In(0.24)Ga(0.7)6N/GaN quantum well by low temperature photoluminescence. With increasing temperature, the polarization degree decreases due to thermal population of the excited valence band level. This effect suggests an accurate method to determine the interlevel energy, which, for the studied well, is 32 meV. Time-resolved photoluminescence measurements set radiative recombination times between 2 and 12 ns for temperatures from 3 to 300 K. Nonradiative recombination was found to be slow, over 2 ns at 300 K, taking place via traps with activation energy of 0.19 eV.
Place, publisher, year, edition, pages
2014. Vol. 104, no 11, 111113- p.
Increasing temperatures, InGaN/GaN quantum well, Low temperature photoluminescence, Non-radiative recombinations, Polarization degree, Polarized photoluminescence, Radiative recombination, Time-resolved photoluminescence
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-144947DOI: 10.1063/1.4869459ISI: 000333252300013ScopusID: 2-s2.0-84897888589OAI: oai:DiVA.org:kth-144947DiVA: diva2:715461
FunderSwedish Energy Agency, 36652-1Knut and Alice Wallenberg Foundation
QC 201405052014-05-052014-05-052014-05-05Bibliographically approved