Lateral p-n-p Transistors and Complementary SiC Bipolar Technology
2014 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 35, no 4, 428-430 p.Article in journal (Refereed) Published
Lateral p-n-p transistors and a complementary bipolar technology have been demonstrated for analog integrated circuits. Besides vertical n-p-n's, this technology provides lateral p-n-p's at the cost of one additional lithographic and dry etching step. Both devices share the same epitaxial layers and feature topside contacts to all terminals. The influence on p-n-p current gain of contact topology (circular versus rectangular), effective base width, base/emitter doping ratio, and temperature was studied in detail. In the range -40 degrees C to 300 degrees C, the current gain of the p-n-p transistor shows a maximum of similar to 37 around 0 degrees C and decreases to similar to 8 at 300 degrees C, whereas in the same range, the gain of n-p-n transistors exhibits a negative temperature coefficient.
Place, publisher, year, edition, pages
2014. Vol. 35, no 4, 428-430 p.
Bipolar junction transistor (BJT), silicon carbide (SiC), complementary bipolar, lateral PNP transistor, current gain temperature dependence, high and low temperature
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-144932DOI: 10.1109/LED.2014.2303395ISI: 000333521700002ScopusID: 2-s2.0-84897916018OAI: oai:DiVA.org:kth-144932DiVA: diva2:716139
FunderSwedish Foundation for Strategic Research
QC 201405082014-05-082014-05-052016-04-25Bibliographically approved