Strain engineering in GeSnSi materials
2012 (English)In: SiGe, Ge, and related compounds 5: materials, processing, and devices, Electrochemical Society, 2012, no 9, 527-531 p.Conference paper (Refereed)
In this study, Ge1-x-ySnxSiy layers (0.01≤x≤ 0.06 and 0≤y≤0.12) using Ge2H6, SnCl4 (SnD4) and Si2H6 have successfully grown at 290-310 °C on Ge virtual layer on Si(100) by using RPCVD technique. It has been demonstrated that the quality of epitaxial layers is dependent on the growth parameters, layer thickness and the quality of Ge virtual layer. The incorporation of P and B in GeSn matrix has been studied and the effect of dopant specie and concentration on Sn content has been presented. It was found that a proper balance of P, B or Si and Sn flux during the epitaxy improves the incorporation of Sn in Ge matrix. This is explained by the compensation of tensile strain induced by dopants or Si with the compressive strain caused by Sn to obtain the minimum energy in Ge matrix. P-i-n type doped structures of Ge-Sn-Si were grown and the layer quality was analyzed.
Place, publisher, year, edition, pages
Electrochemical Society, 2012. no 9, 527-531 p.
, ECS Transactions, ISSN 1938-5862 ; 50
Compressive strain, Doped structures, Effect of dopants, Growth parameters, Layer thickness, Minimum energy, Strain engineering, Virtual layers
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-144744DOI: 10.1149/05009.0527ecstISI: 000338015300062ScopusID: 2-s2.0-84881311746ISBN: 978-160768357-5OAI: oai:DiVA.org:kth-144744DiVA: diva2:716731
5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting; Honolulu, HI; United States; 7 October 2012 through 12 October 2012
QC 201405122014-05-122014-04-292015-11-25Bibliographically approved