Temporary Wafer Bonding and Debonding for 3D Integration Using an Electrochemically Active Polymer Adhesive
2014 (English)In: ECS Journal of Solid State Science and Technology, ISSN 2162-8769, Vol. 3, no 5, P115-P121 p.Article in journal (Refereed) Published
The use of thin silicon wafers is an enabling technology for 3D integration in the semiconductor industry. However, thin silicon wafers are fragile to handle and reliable solutions are required for thin wafer handling. This paper reports a novel method of bonding and debonding a thin wafer (< 50 mu m) using an electrochemically active polymer adhesive. In the presented method the carrier wafer is first spin coated with the adhesive and then bonded to the device wafer by applying force and temperature. Debonding of the wafer is realized at room temperature by applying a voltage between the carrier and the device wafer, which substantially reduces the bond strength. The bonding and debonding properties of the adhesive show that temporary wafer bonding using electrochemically active adhesives has the potential to be an attractive approach for temporary wafer bonding for thin wafer handling in 3D integration processes.
Place, publisher, year, edition, pages
2014. Vol. 3, no 5, P115-P121 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-145289DOI: 10.1149/2.001405jssISI: 000334161400006ScopusID: 2-s2.0-84904717006OAI: oai:DiVA.org:kth-145289DiVA: diva2:717376
QC 201405152014-05-152014-05-152015-09-07Bibliographically approved