A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits
2013 (English)In: Journal of Microelectronics and Electronic Packaging, ISSN 1551-4897, Vol. 10, no 4, 155-162 p.Article in journal (Refereed) Published
A 4H-SiC bipolar technology suitable for hightemperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 27Â°C up to 500Â°C for both the metallization systems. When operated on -15 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The performance of aluminum and platinum interconnects was evaluated by performing accelerated electromigration tests at 300Â°C with current density of about 1 MA/cmÂ² on contact chains consisting of 10 integrated resistors. Although in both cases the contact chains failed after less than one hour, different failure mechanisms were observed for the two metallization systems: electromigration for the aluminum system and poor step coverage and via filling for the platinum system.
Place, publisher, year, edition, pages
International Microelectronics and Packaging Society (IMAPS), 2013. Vol. 10, no 4, 155-162 p.
Silicon carbide (SiC), emitter coupled logic (ECL), high temperature integrated circuits (ICs), OR-NOR gate, bipolar junction transistor (BJT), aluminum metallization, platinum metallization
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-145366OAI: oai:DiVA.org:kth-145366DiVA: diva2:718047
QC 201405222014-05-192014-05-192014-05-22Bibliographically approved