SiC Etching and Sacrificial Oxidation Effects on the Performance of 4H-SiC BJTs
2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 1005-1008 p.Article in journal (Refereed) Published
Performance of 4H-SiC BJTs fabricated on a single 100mm wafer with different SiC etching and sacrificial oxidation procedures is compared in terms of peak current gain in relation to base intrinsic sheet resistance. The best performance was achieved when device mesas were defined by inductively coupled plasma etching and a dry sacrificial oxide was grown at 1100 °C.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2014. Vol. 778-780, 1005-1008 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-145399DOI: 10.4028/www.scientific.net/MSF.778-780.1005ISI: 000336634100239ScopusID: 2-s2.0-84896065299ISBN: 978-3-03835-010-1OAI: oai:DiVA.org:kth-145399DiVA: diva2:718064
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 – October 4, 2013, Miyazaki, Japan
QC 20140522. QC 201603042014-05-192014-05-192016-03-04Bibliographically approved