Formation of ordered pore arrays at the nanoscale by electrochemical etching of n-type silicon
2004 (English)In: Superlattices and Microstructures, ISSN 0749-6036, E-ISSN 1096-3677, Vol. 36, no 1/3, 245-254 p.Article in journal (Refereed) Published
Electrochemical etching has been studied to structure n-type silicon substrates at the nanoscale. In this work, well-ordered pore arrays with diameters in the range of 150-500 nm and depths up to 50 mum have been fabricated. The pores were successfully formed by anodic etching in (100)oriented n-type silicon wafers of low-resistivity, typically 1 Omegacm, using aqueous hydrofluoric acid solutions. The lithographic step was performed in a thermally grown oxide using a stepper and dry oxide etching technique. Two types of oxide openings and pitch sizes were tested. The smallest oxide opening realised at this stage was 0.5 mum for a pitch of 1 mum. Stable pore formation was obtained and the smallest pore size obtained was about 200 nm with an aspect ratio close to 100.
Place, publisher, year, edition, pages
2004. Vol. 36, no 1/3, 245-254 p.
Electrolytic polishing, Etching, Hydrofluoric acid, Lithography, Pore size, Silicon wafers, Dry oxide etching, Electrochemical etching (ECE), Pore arrays, Space charge region (SCR), Silicon
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4956DOI: 10.1016/j.spmi.2004.08.037ISI: 000225425100028ScopusID: 2-s2.0-9644259379OAI: oai:DiVA.org:kth-4956DiVA: diva2:7213
QC 201008312005-03-032005-03-032010-08-31Bibliographically approved