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Analysis of optical near-field energy transfer by stochastic model unifying architectural dependencies
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. (Laboratory of Photonics and Microwave Engineering)
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2014 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 115, no 15, 154306- p.Article in journal (Refereed) Published
Abstract [en]

We theoretically and experimentally demonstrate energy transfer mediated by optical near-field interactions in a multi-layer InAs quantum dot (QD) structure composed of a single layer of larger dots and N layers of smaller ones. We construct a stochastic model in which optical near-field interactions that follow a Yukawa potential, QD size fluctuations, and temperature-dependent energy level broadening are unified, enabling us to examine device-architecture-dependent energy transfer efficiencies. The model results are consistent with the experiments. This study provides an insight into optical energy transfer involving inherent disorders in materials and paves the way to systematic design principles of nanophotonic devices that will allow optimized performance and the realization of designated functions.

Place, publisher, year, edition, pages
2014. Vol. 115, no 15, 154306- p.
Keyword [en]
Multipolar Interband Absorption, Semiconductor Quantum-Dot, Enhancement, Fabrication, Mechanism, Dynamics, Systems
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URN: urn:nbn:se:kth:diva-145828DOI: 10.1063/1.4871668ISI: 000335227100037ScopusID: 2-s2.0-84903398884OAI: diva2:721347

QC 20140604

Available from: 2014-06-04 Created: 2014-06-02 Last updated: 2014-10-08Bibliographically approved

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Holmström, PetterThylén, Lars
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Optics and Photonics, OFO
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