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Spin dependent transport in Co nano-scale tunnel junctions
KTH, Superseded Departments, Physics.
2002 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Ferromagnetic tunnel junctionshave been fabricated, measured and theoretically described. Anoverview of the Julliere model, and Slonczewski's model todescribe the resistance change due to di®erent orientationof the magnetization between the magnetic electrodes(magnetoresistance) is given. Then a double-junctionconfiguration is theoretically analyzed in the sense of localspin accumulation related to the length an electron can travelbefore relaxing its spin. The analysis shows that thee®ect of spin accumulation contributes with a very smallor negligiblechange of the magnetoresistance for adouble-junction with large resistive barriers, and biased witha small voltage compared with a simple two-resistors-in-seriesmodel. Single-, triple-, and five- junction arrays werefabricated and measured. In order to analyze the spinaccumulation e®ect a double-junction with three terminalswas fabricated and measured to enable measurement of eachjunction of the double junction individually. Thedouble-junction configuration did not show any additionalmagnetoresistance over the two-junctions-in-series value at lowvoltage bias. However, the magnetoresistance of adouble-junction exhibited a weaker dependence on the biasvoltage than that expected for two junctions in series.

Place, publisher, year, edition, pages
Stockholm: Fysik , 2002. , 53 p.
Series
Trita-FYS, ISSN 0280-316X ; 2001:11
Identifiers
URN: urn:nbn:se:kth:diva-1381ISBN: 91-7283-236-3 (print)OAI: oai:DiVA.org:kth-1381DiVA: diva2:7233
Note
NR 20140805Available from: 2002-01-23 Created: 2002-01-23Bibliographically approved

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