Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fabrication of strained Ge on insulator via room temperature wafer bonding
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
Show others and affiliations
2014 (English)In: 2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014, IEEE Computer Society, 2014, 81-84 p.Conference paper, Published paper (Refereed)
Abstract [en]

This work describes a strained germanium on insulator (GeOI) fabrication process using wafer bonding and etch-back techniques. The strained Ge layer is fabricated epitaxially using reduced pressure chemical vapor deposition (RPCVD). The strained Ge is grown pseudomorphic on top of a partially relaxed Si 0.66Ge0.34 layer. Wafer bonding is performed at room temperature without post-anneal processes and the etch-back steps are performed without mechanical grinding and chemical mechanical polishing (CMP).

Place, publisher, year, edition, pages
IEEE Computer Society, 2014. 81-84 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-146687DOI: 10.1109/ULIS.2014.6813911ISI: 000341731300021Scopus ID: 2-s2.0-84901380569ISBN: 978-1-4799-3718-9 (print)OAI: oai:DiVA.org:kth-146687DiVA: diva2:725331
Conference
2014 15th International Conference on Ultimate Integration on Silicon, ULIS 2014; Stockholm; Sweden; 7 April 2014 through 9 April 2014
Note

QC 20140616

Available from: 2014-06-16 Created: 2014-06-13 Last updated: 2014-10-09Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Hellström, Per-Erik

Search in DiVA

By author/editor
Asadollahi, AliRadamson, HenryZabel, ThomasHellström, Per-ErikÖstling, Mikael
By organisation
Integrated Devices and Circuits
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 128 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf