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Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC
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2013 (English)In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, IEEE , 2013, 6728002- p.Conference paper, Published paper (Refereed)
Abstract [en]

In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power.

Place, publisher, year, edition, pages
IEEE , 2013. 6728002- p.
Keyword [en]
4H-SiC, electrical characterizations, ion implantation, neutron irradiation, pn junction
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-146919DOI: 10.1109/ANIMMA.2013.6728002Scopus ID: 2-s2.0-84894493408ISBN: 978-147991047-2 (print)OAI: oai:DiVA.org:kth-146919DiVA: diva2:726617
Conference
2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013; Marseille; France; 23 June 2013 through 27 June 2013
Note

QC 20140618

Available from: 2014-06-18 Created: 2014-06-18 Last updated: 2014-06-18Bibliographically approved

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Hallén, Anders

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