Radiation silicon carbide detectors based on ion implantation of boron
2013 (English)In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, IEEE , 2013, 6727997- p.Conference paper (Refereed)
Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.
Place, publisher, year, edition, pages
IEEE , 2013. 6727997- p.
diode, pn junction, silicon carbide, space charge region, thermal neutrons
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-146921DOI: 10.1109/ANIMMA.2013.6727997ScopusID: 2-s2.0-84894502368ISBN: 978-147991047-2OAI: oai:DiVA.org:kth-146921DiVA: diva2:729033
2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013; Marseille; France; 23 June 2013 through 27 June 2013
QC 201406252014-06-252014-06-182015-04-15Bibliographically approved