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Radiation silicon carbide detectors based on ion implantation of boron
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2013 (English)In: 2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013, IEEE , 2013, 6727997- p.Conference paper, Published paper (Refereed)
Abstract [en]

Radiation detectors based on radiation-hardened semiconductor such as silicon carbide (SiC), have received considerable attention in many applications such as in outer space, high energy physics experiments, gas and oil prospection, and nuclear reactors. For the first time it was demonstrated the reliability of thermal neutron detectors realized by standard ion implantation of boron layer as a neutron converter layer. Moreover, these detectors respond to thermal neutrons and gamma rays showing different counting rates at different voltages and under different types of shielding.

Place, publisher, year, edition, pages
IEEE , 2013. 6727997- p.
Keyword [en]
diode, pn junction, silicon carbide, space charge region, thermal neutrons
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-146921DOI: 10.1109/ANIMMA.2013.6727997Scopus ID: 2-s2.0-84894502368ISBN: 978-147991047-2 (print)OAI: oai:DiVA.org:kth-146921DiVA: diva2:729033
Conference
2013 3rd International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and Their Applications, ANIMMA 2013; Marseille; France; 23 June 2013 through 27 June 2013
Note

QC 20140625

Available from: 2014-06-25 Created: 2014-06-18 Last updated: 2015-04-15Bibliographically approved

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Hallén, Anders

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