Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC
2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 836-840 p.Article in journal (Refereed) Published
10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 mu s. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a V-F of 3.3 V at 100 A/cm(2) at 25 degrees C, which was decreased to 3.0 V at 300 degrees C.
Place, publisher, year, edition, pages
2014. Vol. 778-780, 836-840 p.
On-axis 4H-SiC, PiN Diode, lifetime enhancement, V-F
IdentifiersURN: urn:nbn:se:kth:diva-147446DOI: 10.4028/www.scientific.net/MSF.778-780.836ISI: 000336634100198ScopusID: 2-s2.0-84896089454ISBN: 978-3-03835-010-1OAI: oai:DiVA.org:kth-147446DiVA: diva2:730217
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
QC 20140627. QC 201603042014-06-272014-06-272016-03-04Bibliographically approved