Characterization of Ohmic Ni/Ti/Al and Ni Contacts to 4H-SiC from-40 degrees C to 500 degrees C
2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 681-684 p.Article in journal (Refereed) Published
Extreme temperature measurements of Ni/Ti/Al contacts to p-type SiC (N-a = 1.10(18)cm(-3)), with a specific contact resistivity rho(c) = 6.75.10(-4) Omega cm(2) at 25 degrees C, showed a five time increase of the specific contact resistivity at -40 degrees C (rho(c) = 3.16.10(-3) Omega cm(2)), and a reduction by almost a factor 10 at 500 degrees C (rho(c) = 7.49.10(-5) Omega cm(2)). The same response of rho(c) to temperature was seen for contacts on lower doped epitaxial layer. Also N-type nickel contacts improved with higher operational temperature but with a considerably smaller variation over the same temperature interval. No degradation of the performance was seen to either the Ni/Ti/Al or the Ni contacts due to the high temperature measurements.
Place, publisher, year, edition, pages
2014. Vol. 778-780, 681-684 p.
IdentifiersURN: urn:nbn:se:kth:diva-147445DOI: 10.4028/www.scientific.net/MSF.778-780.681ISI: 000336634100161ScopusID: 2-s2.0-84896092522ISBN: 978-303835010-1OAI: oai:DiVA.org:kth-147445DiVA: diva2:730231
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
QC 20140627. QC 201603042014-06-272014-06-272016-03-04Bibliographically approved