Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor
2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 549-552 p.Article in journal (Refereed) Published
LaxHfyO nano-laminated thin film deposited using an atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) temperature in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.
Place, publisher, year, edition, pages
2014. Vol. 778-780, 549-552 p.
ALD, 4H-SiC, MOS, High-K, Dielectrics
IdentifiersURN: urn:nbn:se:kth:diva-147444DOI: 10.4028/www.scientific.net/MSF.778-780.549ISI: 000336634100129ScopusID: 2-s2.0-84896089444ISBN: 978-303835010-1OAI: oai:DiVA.org:kth-147444DiVA: diva2:730250
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
QC 20140627. QC 201603042014-06-272014-06-272016-03-04Bibliographically approved