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Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
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2014 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 778-780, 549-552 p.Article in journal (Refereed) Published
Abstract [en]

LaxHfyO nano-laminated thin film deposited using an atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) temperature in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Place, publisher, year, edition, pages
2014. Vol. 778-780, 549-552 p.
Keyword [en]
ALD, 4H-SiC, MOS, High-K, Dielectrics
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-147444DOI: 10.4028/www.scientific.net/MSF.778-780.549ISI: 000336634100129Scopus ID: 2-s2.0-84896089444ISBN: 978-303835010-1 (print)OAI: oai:DiVA.org:kth-147444DiVA: diva2:730250
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
Note

QC 20140627. QC 20160304

Available from: 2014-06-27 Created: 2014-06-27 Last updated: 2017-12-05Bibliographically approved

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Zetterling, Carl-Mikael

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