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Diffusion of alkali metals in SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-0292-224X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 and 2, 2014, 297-300 p.Conference paper, Published paper (Refereed)
Abstract [en]

Diffusion of lithium, sodium and potassium in SiC has been studied by secondary ion mass spectrometry. The alkali metal diffusion sources have been introduced by ion implantation. Subsequent anneals have been carried out in vacuum or in Ar atmosphere in the temperature range 700 degrees C - 1500 degrees C for 5 min to 16 h. The bombardment-induced defects in the vicinity of the ion implanted profile are readily decorated by the implanted. In the bulk, the diffusing alkali metals are most likely trapped and detrapped at boron and/or other defects during diffusion. The diffusivity of the studied alkali metals decreases as the mass increases, Li+<Na+<K+, but the sodium mobility in SiC is substantial already at 1100 degrees C.

Place, publisher, year, edition, pages
2014. 297-300 p.
Series
Materials Science Forum, ISSN 0255-5476 ; 778-780
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-147443DOI: 10.4028/www.scientific.net/MSF.778-780.297ISI: 000336634100070Scopus ID: 2-s2.0-84896068123OAI: oai:DiVA.org:kth-147443DiVA: diva2:730276
Conference
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
Note

QC 20140627

Available from: 2014-06-27 Created: 2014-06-27 Last updated: 2015-02-20Bibliographically approved

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Linnarsson, MargaretaHallén, Anders

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