Diffusion of alkali metals in SiC
2014 (English)In: Silicon Carbide and Related Materials 2013, PTS 1 and 2, 2014, 297-300 p.Conference paper (Refereed)
Diffusion of lithium, sodium and potassium in SiC has been studied by secondary ion mass spectrometry. The alkali metal diffusion sources have been introduced by ion implantation. Subsequent anneals have been carried out in vacuum or in Ar atmosphere in the temperature range 700 degrees C - 1500 degrees C for 5 min to 16 h. The bombardment-induced defects in the vicinity of the ion implanted profile are readily decorated by the implanted. In the bulk, the diffusing alkali metals are most likely trapped and detrapped at boron and/or other defects during diffusion. The diffusivity of the studied alkali metals decreases as the mass increases, Li+<Na+<K+, but the sodium mobility in SiC is substantial already at 1100 degrees C.
Place, publisher, year, edition, pages
2014. 297-300 p.
, Materials Science Forum, ISSN 0255-5476 ; 778-780
IdentifiersURN: urn:nbn:se:kth:diva-147443DOI: 10.4028/www.scientific.net/MSF.778-780.297ISI: 000336634100070ScopusID: 2-s2.0-84896068123OAI: oai:DiVA.org:kth-147443DiVA: diva2:730276
15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), SEP 29-OCT 04, 2013, Miyazaki, JAPAN
QC 201406272014-06-272014-06-272015-02-20Bibliographically approved