Electron structure and electron dynamics at InSb(111)2×2 semiconductor surface
2003 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 76, no 3, 299-302 p.Article in journal (Refereed) Published
The conduction band electronic structure and the electron dynamics of the clean InSb(111)2 x 2 surface have been studied by laser based pump-and-probe photoemission. The results are compared to earlier studies of the InSb(110) surface. It is found that both the energy location and the time dependence of the photoexcited structures are very similar for the two surfaces. This indicates that the dominant part of the photoemission signal in the conduction band region is due to excitations of electrons in the bulk region and that the surface electronic states play a minor role. The fast decay of the excited state, tau similar to 12 ps, indicates that diffusion of hot electrons into the bulk is an important mechanism.
Place, publisher, year, edition, pages
2003. Vol. 76, no 3, 299-302 p.
Band structure, Carrier mobility, Electron scattering, Laser pulses, Laser tuning, Light emission, Photoelectron spectroscopy, Solid state lasers, Conduction band, Electron dynamics, Indium antimonide, Laser based pump-and-probe photoemission, Time and angle resolved photoelectron spectroscopy
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-4972DOI: 10.1007/s00339-002-1811-zISI: 000179782100001OAI: oai:DiVA.org:kth-4972DiVA: diva2:7306
QC 201010152005-03-072005-03-072010-10-15Bibliographically approved